Light emitting apparatus, illumination apparatus and display apparatus

ABSTRACT

A light emitting apparatus including: one or a plurality of light emitting devices each having a plurality of electrodes and each emitting light from the upper surface of the light emitting device; a plurality of terminal electrodes provided on the lower side of the light emitting devices in a positional relation with the light emitting devices and electrically connected to the electrodes of the light emitting devices; a first metal line brought into contact with the upper surfaces of the light emitting devices and one of the terminal electrodes, provided at a location separated away from side surfaces of the light emitting devices and created in a film creation process; and an insulator in which the light emitting devices and the first metal line are embedded.

RELATED APPLICATION DATA

This application is a continuation of U.S. patent application Ser. No.14/714,879 filed May 18, 2015, which is a continuation of U.S. patentapplication Ser. No. 13/361,264 filed Jan. 30, 2012, now U.S. Pat. No.9,065,029 issued Jun. 23, 2015, the entireties of which are incorporatedherein by reference to the extent permitted by law. The presentapplication contains subject matter related to and claims the benefit ofpriority to Japanese Patent Application No. JP 2011-038639 filed on Feb.24, 2011 in the Japan Patent Office, the entirety of which isincorporated by reference herein to the extent permitted by law.

BACKGROUND

The present disclosure relates to a light emitting apparatus employingone light emitting device or a plurality of light emitting devices andrelates to an illumination apparatus as well as a display apparatuswhich both employ the light emitting apparatus.

In recent years, an LED (Light Emitting Diode) display unit serving as alight and thin display unit draws much attention. The LED display unitemploys an LED in each display pixel thereof. The LED display unit ischaracterized in that the LED display unit does not exhibit visual-fieldangle dependence. The visual-field angle dependence is a characteristicshowing contrast and hue changes according to the visual field. Inaddition, the LED display unit is also characterized in that the LEDdisplay unit reacts to a color change quickly in case there is a colorchange. However, it is necessary to mount several millions of LED chipsof display pixels at a high transfer-time yield on a wiring substrateused for wiring the LED chips to each other. Thus, it is necessary toprovide a method for mounting the LED chips on the wiring substrate at ahigh transfer-time yield by carrying out simple processes.

Documents such as Japanese Patent Laid-open No. 2004-273596 disclose amethod for transferring LED chips (each serving as a light emittingdevice cited above) to a wiring substrate in a batch operation. To putit concretely, the LED chips are held in a resin layer on a transfersubstrate. Then, the side of the resin layer holding the LED chips onthe transfer substrate as they are is pasted on the wiring substrate.Subsequently, a peeling process is carried out on the boundary surfacebetween the transfer and wiring substrates.

SUMMARY

The LED chip described above has a very small typical size of about 20microns. Thus, if an LED chip must be replaced with another for somereasons after the chip has been mounted on a wiring substrate, thehandleability of the chip at the replacement work time is not so good. Aconceivable typical application of the LED chip is a light emittingapparatus of the type of a package having a large size. In the lightemitting apparatus, one or a plurality of LED chips are sealed by makinguse of resin. The light emitting apparatus is mounted on a wiringsubstrate. In such an application, the size of the light emittingapparatus is larger than the size of the LED chip. Thus, thehandleability at the replacement work time can be improved.

If the size of the light emitting apparatus is too large in comparisonwith the size of the light emitting device, however, the scale ofintegration of the light emitting devices on the wiring substrate isinevitably small. In this case, the scale of integration of the lightemitting devices is the number of the light emitting devices per unitarea. In addition, if the light emitting apparatus is too thick, theamount of light incident to the upper surface of the light emittingapparatus decreases so that the amount of light that can be fetched fromthe upper surface of the light emitting apparatus also undesirablydecreases as well. If an attempt is to be made to make the lightemitting apparatus thick and to increase the amount of light that can befetched from the upper surface of the light emitting apparatus, it isnecessary to raise the size of the light emitting apparatus. Thus, thescale of integration of the light emitting devices becomes unavoidablysmall.

As is obvious from the above description, reducing the thickness of thelight emitting apparatus as much as possible is desirable as seen fromthe two following points of view. In the first place, a reducedthickness of the light emitting apparatus increases the amount of lightthat can be fetched from the upper surface of the light emittingapparatus. In the second place, a reduced thickness of the lightemitting apparatus increases the integration of the light emittingdevices on the wiring substrate. If the integration of the lightemitting devices on the wiring substrate increases, however, it becomesdifficult to make use of a bonding wire as a wire for electricallyconnecting a surface electrode on the upper surface of the lightemitting device and a terminal electrode of the light emitting apparatusto each other. Even if a bonding wire can be used as a wire forelectrically connecting a surface electrode on the upper surface of thelight emitting device and a terminal electrode of the light emittingapparatus to each other, it is very difficult to have the bonding wireembedded into resin including light emitting devices embedded thereinbecause the thickness of the light emitting apparatus is small. If thebonding wire protrudes out from the upper surface of the resin includinglight emitting devices embedded therein, the bonding wire can become acause of a low transfer-time yield obtained at the transfer time of thelight emitting apparatus.

It is thus a first aim of the present disclosure addressing the problemsdescribed above to provide a package-type light emitting apparatusallowing the thickness to be reduced throughout the entire apparatuswithout lowering the yield of what is obtained from a wafer and theyield obtained at a transfer time. In addition, it is a second aim ofthe present disclosure to provide an illumination apparatus as well as adisplay apparatus which both employ the light emitting apparatus.

A light emitting apparatus provided by the embodiments of the presentdisclosure includes:

one or a plurality of light emitting devices each having a plurality ofelectrodes and each emitting light from the upper surface of the lightemitting device;

a plurality of terminal electrodes provided on the lower side of thelight emitting devices in a positional relation with the light emittingdevices and electrically connected to the electrodes of the lightemitting devices;

a first metal line brought into contact with the upper surfaces of thelight emitting devices and one of the terminal electrodes, provided at alocation separated away from side surfaces of the light emitting devicesand created in a film creation process; and

an insulator in which the light emitting devices and the first metalline are embedded.

An illumination apparatus provided by the embodiments of the presentdisclosure includes a plurality of light emitting apparatus mounted on asubstrate. Each of the light emitting apparatus has the sameconfiguration elements as the light emitting apparatus described aboveas the light emitting apparatus provided by the embodiments of thepresent disclosure.

A display apparatus provided by the embodiments of the presentdisclosure includes a display panel having a plurality of pixels and adriving circuit for driving the pixels on the basis of a video signal.Each of the pixels on the display panel of the display apparatusprovided by the embodiments of the present disclosure is one of aplurality of light emitting apparatus mounted on a substrate. Each ofthe light emitting apparatus has the same configuration elements as thelight emitting apparatus described above as the light emitting apparatusprovided by the embodiments of the present disclosure.

In the light emitting apparatus, the illumination apparatus and thedisplay apparatus which are provided by the embodiments of the presentdisclosure, the first metal line brought into contact with the uppersurfaces of the light emitting devices and one of the terminalelectrodes is not a bonding wire but a wire created in a film creationprocess. Thus, the first metal line can be embedded in the insulator inwhich the light emitting devices are also embedded.

The light emitting apparatus provided by the embodiments of the presentdisclosure may further have a second metal line electrically connectedto the terminal electrode not connected to the first metal line,extended toward the upper surfaces of the light emitting devices andcreated in a film creation process. In such a configuration, the secondmetal line can be embedded in the insulator.

By the way, each of the first and second metal lines in the presentdisclosure can be created by carrying out processes (A1) to (A3)described as follows:

-   (A1): A process of creating a sacrifice layer for covering side    surfaces of the light emitting devices and covering a portion of a    surface of each of the terminal electrodes.-   (A2): A process of stacking a plating metal on a predetermined area    of the upper surface of a seed metal after creating the seed metal    on the entire surface including the sacrifice layer.-   (A3): A process of removing the sacrifice layer and at least a    member included in the seed metal and not brought into contact with    the plating metal.

If each of the first and second metal lines in the present disclosure isa line created by carrying out the processes described above, theinsulator can be created by creating a transparent resin layer andhardening the layer so as to embed the light emitting device as well asthe first and second metal lines.

The light emitting apparatus provided by the embodiments of the presentdisclosure can be manufactured by carrying out processes (B1) to (B7)described as follows:

-   (B1): A process of fixing one or a plurality of light emitting    devices each having a plurality of electrodes and each emitting    light from the upper surface of the light emitting device on one or    a plurality of terminal electrodes on a wiring substrate having the    terminal electrodes already created on the surface of the wiring    substrate.-   (B2): A process of creating a sacrifice layer for covering side    surfaces of the light emitting devices and covering a portion of a    surface of each of the terminal electrodes.-   (B3): A process of stacking a plating metal on a predetermined area    of the upper surface of a seed metal after creating the seed metal    on the entire surface including the sacrifice layer.-   (B4): A process of creating a first metal line for electrically    connecting one terminal electrode of the light emitting apparatus    and one electrode of the light emitting device and creating a second    metal line electrically connected to another terminal electrode not    connected to the first metal line by removing the sacrifice layer    and at least a member included in the seed metal and not brought    into contact with the plating metal.-   (B5): A process of creating an insulator by creating a transparent    resin layer and hardening the layer so as to embed the light    emitting device as well as the first and second metal lines.-   (B6): A process of separating the insulator for each light emitting    device or for each plurality of light emitting devices.-   (B7): A process of peeling off the substrate.

In the manufacturing methods described above, the light emitting deviceis typically used as an LED chip. The LED chip is a chip cut out from awafer making use of crystal growth. That is to say, the LED chip is nota chip of a package type coated with created resin or the like. The sizeof the LED chip is typically in a range of a value not smaller than 5microns to a value not greater than 100 microns. The LED chip has a thinchip shape having an aspect ratio in a range of a value not smaller than0.1 to a value smaller than 1. The aspect ratio of the LED chip isdefined as the ratio of the height of the chip to the weight of thechip.

In addition, in the manufacturing methods described above, the sacrificelayer is typically a photo-resist layer. The sacrifice layer typicallyhas an upper-surface shape getting rounder due to a reflowimplementation and/or use of a grey scale mask. On top of that, in themanufacturing methods described above, the transparent resin can beresin created by carrying out typically a single-layer plating processor a multi-layer plating process. In addition, in the manufacturingmethods described above, the insulator separation process can be carriedout by adoption of typically a photolithography technique, a millingtechnique or the like. On top of that, in the manufacturing methodsdescribed above, it is desirable to make use of a light emitting deviceand an insulator each having a height and a width which both satisfytypically relations determined in advance.

In accordance with the light emitting apparatus, the illuminationapparatus and the display apparatus which are provided by theembodiments of the present disclosure, the first metal line can beembedded into an insulator in which light emitting devices have beenembedded. Thus, the thickness can be reduced throughout the entire lightemitting apparatus without lowering the yield of what is obtained from awafer and the yield obtained at a transfer time.

In addition, in an embodiment of the present disclosure, the first metalline is created by carrying out a film creation process. Thus, byselecting a proper film creation method, it is possible to do thingssuch as creation of the first metal line in a conformal way in spite ofthe very fine structure of the first metal line and creation of thefirst metal line including a dented portion slightly thicker thanrequired. As a result, the structure of the first metal line can be madestable electrically and mechanically.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are perspective-view and cross-sectional diagrams eachshowing a typical configuration of a light emitting apparatus accordingto a first embodiment of the present disclosure;

FIG. 2 is a cross-sectional diagram showing a typical configuration of alight emitting device employed in the light emitting apparatus shown inFIGS. 1A and 1B;

FIG. 3 is a cross-sectional diagram showing another typicalconfiguration of the light emitting device employed in the lightemitting apparatus shown in FIGS. 1A and 1B;

FIG. 4 is a cross-sectional diagram showing typical configurations oflines employed in the light emitting apparatus shown in FIGS. 1A and 1B;

FIG. 5 is a cross-sectional diagram showing other typical configurationsof the lines employed in the light emitting apparatus shown in FIGS. 1Aand 1B;

FIG. 6 is an explanatory model diagram to be referred to in descriptionof the heights of the light emitting device and an insulator which areemployed in the light emitting apparatus shown in FIGS. 1A and 1B aswell as the widths of the light emitting device and the insulator;

FIGS. 7A to 7C are a plurality of perspective-view diagrams each showinga typical wafer used in a process of manufacturing the light emittingapparatus shown in FIGS. 1A and 1B;

FIGS. 8A to 8C are a plurality of perspective-view diagrams each showinga typical temporarily fixing substrate used in the process ofmanufacturing the light emitting apparatus shown in FIGS. 1A and 1B;

FIG. 9 is a perspective-view diagram showing a typical wiring substrateused in the process of manufacturing the light emitting apparatus shownin FIGS. 1A and 1B;

FIG. 10A is an explanatory perspective-view diagram to be referred to indescription of a process of manufacturing the light emitting apparatusshown in FIGS. 1A and 1B;

FIG. 10B is an explanatory perspective-view diagram to be referred to indescription of a process serving as the continuation of the processexplained earlier by referring to FIG. 10A;

FIG. 10C is an explanatory perspective-view diagram to be referred to indescription of a process serving as the continuation of the processexplained earlier by referring to FIG. 10B;

FIGS. 11A to 11D are a plurality of explanatory cross-sectional diagramsto be referred to in description of details of the process explainedearlier by referring to FIG. 10C;

FIGS. 11E to 11G are a plurality of explanatory cross-sectional diagramsto be referred to in description of details of a process serving as thecontinuation the process explained earlier by referring to FIGS. 11A to11D;

FIGS. 12A and 12B are perspective-view and cross-sectional diagramsshowing a state in which the light emitting apparatus 1 has been mountedon a wiring substrate;

FIG. 13 is a perspective-view diagram showing a typical modified versionof the lines employed in the light emitting apparatus shown in FIGS. 1Aand 1B;

FIG. 14 is a perspective-view diagram showing another typical modifiedversion of the lines employed in the light emitting apparatus shown inFIGS. 1A and 1B;

FIG. 15 is a cross-sectional diagram showing a typical modified versionof the insulator employed in the light emitting apparatus shown in FIGS.1A and 1B;

FIGS. 16A and 16B are a plurality of perspective-view diagrams eachshowing a typical modified version of the light emitting apparatus shownin FIGS. 1A and 1B;

FIGS. 17A and 17B are perspective-view and cross-sectional diagrams eachshowing another typical configuration of the light emitting apparatusshown in FIGS. 1A and 1B;

FIG. 18 is a perspective-view diagram showing a typical configuration ofa display apparatus according to a second embodiment of the presentdisclosure;

FIG. 19 is a top-view diagram showing a typical layout on the surface ofa mounting substrate employed the display apparatus shown in FIG. 18;

FIGS. 20A and 20B are perspective-view and cross-sectional diagrams eachshowing a typical configuration of a display pixel on the layout shownin FIG. 19;

FIG. 21 is a top-view diagram showing a modified version of the layouton the surface of the mounting substrate used in the display apparatusshown in FIG. 18;

FIG. 22 is a top-view diagram showing another modified version of thelayout on the surface of the mounting substrate used in the displayapparatus shown in FIG. 18;

FIG. 23 is a cross-sectional diagram showing a modified version of theconfiguration of the display apparatus shown in FIG. 18;

FIG. 24 is a perspective-view diagram showing a typical configuration ofan illumination apparatus according to a third embodiment of the presentdisclosure; and

FIG. 25 is a top-view diagram showing a typical layout on the surface ofa mounting substrate used in the illumination apparatus shown in FIG.24.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present disclosure are explained below in detail byreferring to the diagrams. It is to be noted that the embodiments areexplained by describing topics in the following order.

1: First Embodiment (Implementing a Light Emitting Apparatus)

In this typical light emitting apparatus, three light emitting devicesare coated with a resin having a small thickness.

2: Typical First-Embodiment Modified Versions (Implementing Other LightEmitting Apparatus)

In this other light emitting apparatus, a line is provided with aprotrusion having a light reflecting function. In addition, the uppersurface of an insulator is a rough face. The number of light emittingdevices is different from that of the first embodiment.

3: Second Embodiment (Implementing a Display Apparatus)

This display apparatus is a typical display apparatus employing thelight emitting apparatus according to the first embodiment and itsmodified version.

4: Typical Second-Embodiment Modified Versions (Implementing OtherDisplay Apparatus)

The number of light emitting devices in these other display apparatus isdifferent from that of the display apparatus according to the secondembodiment. These other display apparatus have a common data line. Thelight emitting devices in these other display apparatus emit light rayshaving wavelength bands equal to each other.

5: Third Embodiment (Implementing an Illumination Apparatus)

This illumination apparatus is a typical illumination apparatusemploying the light emitting apparatus according to the first embodimentand its modified version as light sources.

1: First Embodiment Configuration

First of all, a light emitting apparatus 1 according to a firstembodiment of the present disclosure is explained. FIG. 1A is aperspective-view diagram showing a rough typical configuration of thelight emitting apparatus 1 whereas FIG. 1B is a diagram showing across-sectional configuration of the light emitting apparatus 1 at alocation indicated by an arrow A-A shown in FIG. 1A. The light emittingapparatus 1 can be applied well as a display pixel of a displayapparatus known as the so-called LED display unit. The light emittingapparatus 1 is designed into a small package in which a plurality oflight emitting devices are coated with a resin having a small thickness.

Light Emitting Devices 10

As shown in FIG. 1A, the light emitting apparatus 1 employs three lightemitting devices 10. Each of the light emitting devices 10 is asolid-state light emitting device emitting light having a wavelengthband determined in advance from the upper surface of the light emittingdevice 10. To put it concretely, each of the light emitting devices 10is an LED chip. The LED chip is a chip in a state of being cut out froma wafer used for crystal growth. The LED chip is not a chip of a packagetype coated with a created resin or the like. The LED chip has a typicalsize in a range of a value not smaller than 5 microns to a value notgreater than 100 microns. This size is also referred to as a horizontalwidth W1 shown in FIG. 2. The LED chip is known as the so-called microLED. Typically, the planar shape of the LED chip is approximatelyrectangular. The LED chip has the shape of a thin chip. The aspect ratioof the LED chip has a typical value in a range of a value not smallerthan 0.1 to a value smaller than 10. The aspect ratio of the LED chip isdefined as the ratio of the vertical height H1 of the chip to thehorizontal weight W1 of the chip. The vertical height H1 of the LED chipand the horizontal weight W1 of the chip are shown in FIG. 2. Thehorizontal height H1 of the LED chip serving as the light emittingdevice 10 has a typical value in a range of a value not smaller than 3microns to a value not greater than 50 microns.

The light emitting devices 10 are laid out in the light emittingapparatus 1. As shown in FIG. 1A, typically, the light emitting devices10 are laid out to form an array, being separated from each other by agap determined in advance. The gap between two light emitting devices 10adjacent to each other is typically equal to or greater than the size ofthe light emitting device 10. It is to be noted that, depending on theconfiguration of the light emitting apparatus 1, the gap may be madesmaller than the size of the light emitting device 10. The distancebetween the light emitting devices 10 and a side surface of the lightemitting apparatus 1 has a typical value equal to or greater than ½ ofthe size of the light emitting device 10.

The light emitting devices 10 emit light rays of wavelength bandsdifferent from each other. As shown in FIG. 1A for example, the threelight emitting devices 10 include a light emitting device 10G emittinglight of a green-color band, a light emitting device 10R emitting lightof a red-color band and a light emitting device 10B emitting light of ablue-color band. The light emitting device 10G is typically placed at alocation close to a specific side of the light emitting apparatus 1. Thelight emitting device 10B is typically placed at a location close toanother side of the light emitting apparatus 1 on the opposite side ofthe specific side. The light emitting device 10R is typically placed ata location between the light emitting device 10G and the light emittingdevice 10B. It is to be noted that the aforementioned locations of thelight emitting device 10R, the light emitting device 10G and the lightemitting device 10B are no more than typical locations. In the followingdescription, however, the light emitting device 10R, the light emittingdevice 10G and the light emitting device 10B may be assumed to be fixedat their respective locations explained above in order to describerelations to the positions of other configuration elements.

As shown in FIG. 2 for example, the light emitting device 10 has astacked structure obtained by stacking a first conductive type layer 11,an active layer 12 and a second conductive type layer 13 in this order.In each of the light emitting device 10G and the light emitting device10B, the first conductive type layer 11, the active layer 12 and thesecond conductive type layer 13 are made from typically semiconductormaterials pertaining to the InGaN group. In the light emitting device10R, on the other hand, the first conductive type layer 11, the activelayer 12 and the second conductive type layer 13 are made from typicallysemiconductor materials pertaining to the AlGaInP group.

A first electrode 14 and a second electrode 15 are configured to includea metallic material having a high light reflectance. A typical exampleof such a metallic material is Ag (silver). It is to be noted that, asshown in none of the figures, every light emitting device 10 may have aninsulation film for coating side surfaces and an area included in theupper surface as an area in which the first electrode 14 is not created.

As shown in FIG. 2 for example, the side surfaces of the light emittingdevice 10 are surfaces perpendicularly intersecting with the stackingdirection. It is to be noted that, taking the light fetching efficiencyinto consideration, the side surfaces of the light emitting device 10can also be inclined surfaces intersecting with the stacking direction.As shown in FIG. 3 for example, the side surfaces of the light emittingdevice 10 can be inclined surfaces shaping the cross section of thelight emitting device 10 into a reversed trapezoidal form.

As shown in FIGS. 2 and 3, the first electrode 14 is provided below thelower surface of the first conductive type layer 11. The first electrode14 is brought into contact with the first conductive type layer 11 andelectrically connected to the first conductive type layer 11. On theother hand, the second electrode 15 is provided on the upper surface ofthe second conductive type layer 13. The second electrode 15 is broughtinto contact with the second conductive type layer 13 and electricallyconnected to the second conductive type layer 13. Each of the firstelectrode 14 and the second electrode 15 can be configured as a singleelectrode or a plurality of electrodes. It is to be noted that, in thefollowing description, each of the first electrode 14 and the secondelectrode 15 is assumed to be configured as a single electrode as shownin FIGS. 2 and 3.

As shown in FIGS. 1A and 1B, the light emitting apparatus 1 is providedwith an insulator 20 having a chip shape for coating the light emittingdevice 10. In addition, as shown in FIGS. 1A and 1B, the light emittingapparatus 1 is also provided with terminal electrodes 31 and 32 as wellas lines 33 and 34 for every light emitting device 10. It is to be notedthat the line 33 is a typical concrete example of a second metal line ofthe embodiments of the present disclosure whereas the line 34 is atypical concrete example of a first metal line of the embodiments of thepresent disclosure.

Insulator 20

The insulator 20 holds the light emitting devices 10 and surrounds thelight emitting devices 10 from at least a side and the upper surface ofthe light emitting device 10. The insulator 20 further has the lines 33and 34 inside the insulator 20. That is to say, the lines 33 and 34 areembedded in the insulator 20. The insulator 20 is made from typically aresin material such as polyimide. It is to be noted that the insulator20 can also be made by hardening transparent resin having a lightresistance as well as a light-sensitive characteristic. The aspect ratioof the insulator 20 has a value smaller than 1. The aspect ratio of theinsulator 20 is defined as the ratio of the height H2 of the insulator20 to the width W2 of the upper surface of the insulator 20. The heightH2 of the insulator 20 and the width W2 of the upper surface of theinsulator 20 are shown in FIG. 2. From a standpoint of preventing thelight emitting apparatus 1 from being oriented horizontally at thetransfer time of the light emitting apparatus 1 in the manufacturingprocess, however, it is desirable to set the aspect ratio of theinsulator 20 at a value not greater than 1/5. The height H2 of theinsulator 20 is set at a typical value not smaller than 5 microns butnot greater than 50 microns. On the other hand, the width W2 of theupper surface of the insulator 20 is set at a typical value not smallerthan 10 microns but not greater than 100 microns.

As shown in FIGS. 1A and 1B for example, the insulator 20 has flat upperand lower surfaces. No structure elements are provided in particular onthe upper surface of the insulator 20. The upper surface of theinsulator 20 is exposed to the outside such as the air. On the lowersurface of the insulator 20, on the other hand, the terminal electrodes31 and 32 are provided. The terminal electrodes 31 and 32 are separatedfrom each other by a predetermined gap in order to electricallydisconnect the terminal electrodes 31 and 32 from each other.

The terminal electrodes 31 and 32 are created on the lower surface ofthe insulator 20 in such a way that the terminal electrodes 31 and 32are provided on the same level. Each of the terminal electrodes 31 and32 is made from a main material such as Cu (copper). At least a portionof the surface of each of the terminal electrodes 31 and 32 may becovered with a material that can be hardly converted into an oxide. Atypical example of the material that can be hardly converted into anoxide is Au (gold). For example, the whole surface of each of theterminal electrodes 31 and 32 may be covered with a material which canbe hardly converted into an oxide as is the case with Au and Ti. Theterminal electrodes 31 and 32 play the roles of the input and outputterminals of the light emitting apparatus 1 in addition to the role toreflect light emitted from the active layer 12 to the second conductivetype layer 13.

The terminal electrode 31 is electrically connected to the firstelectrode 14 of the light emitting device 10 through a junction material16. The junction material 16 is configured to compose of a plating metalcreated typically in a plating process. It is to be noted that thejunction material 16 can also be created by adoption of a method otherthan the method based on the plating process. The terminal electrode 31is also electrically connected to the line 33. The line 33 is providedat a position separated away from the second electrode 15 located on theupper surface of the light emitting device 10 by a predetermined gap inorder to electrically disconnect the line 33 from the second electrode15.

The line 33 is configured to include a plating metal. To put itconcretely, the line 33 is made from a seed metal and a plating metalstacked on the upper surface of the seed metal. The seed metal is ametal created from Ti, Cu or the like by carrying out a film creationprocess such as a sputtering, PVD or CVD process. On the other hand, theplating metal is a metal created by carrying out a plating process whichis one of film creation processes. It is to be noted that typical typesof coating include electrolytic coating and non-electrolytic coating.The line 33 is a line created by carrying out a plating process. Byselecting an optimum growth method, the line 33 can be created to havean electrically and mechanically stable structure. For example, the line33 is created in a conformal way typically in order to result in auniform film thickness. In addition, the line 33 can also be created tohave a shape with a dented portion which is relatively thick incomparison with other portions. To put it concretely, the dented portionis a portion in the vicinity of a connection point C1 shown in FIG. 1Bas a connection point to be described later.

The terminal electrode 32 is electrically connected to the secondelectrode 15 of the light emitting device 10 through the line 34. Theline 34 is brought into contact with the second electrode 15 provided onthe upper surface of the light emitting device 10 in order toelectrically connect the line 34 to the second electrode 15. The line 34is configured to include a plating metal. To put it concretely, the line34 is made from a seed metal and a plating metal stacked on the uppersurface of the seed metal. The seed metal is a metal created from Ti, Cuor the like by carrying out a film creation process such as asputtering, PVD or CVD process. On the other hand, the plating metal isa metal created by carrying out a plating process which is one of filmcreation processes as is the case with the line 33. It is to be notedthat typical types of coating include electrolytic coating andnon-electrolytic coating. The line 34 is a line created by carrying outa plating process. By selecting an optimum growth method, the line 34can be created to have an electrically and mechanically stablestructure. For example, the line 34 is created in a conformal waytypically in order to result in a uniform film thickness. In addition,the line 34 can also be created to have shape with a dented portionwhich is relatively thick in comparison with other portions. To put itconcretely, the dented portion is a portion in the vicinity of aconnection point C2 shown in FIG. 1B as a connection point to bedescribed as follows.

The connection point C1 connecting the line 33 to the terminal electrode31 and the connection point C2 connecting the line 34 to the terminalelectrode 32 are provided at positions facing each other through thelight emitting device 10. The line 33 is extended from the connectionpoint C1 to the upper surface of the light emitting device 10. By thesame token, the line 34 is extended from the connection point C2 to theupper surface of the light emitting device 10. The lines 33 and 34 areextended to intersect with the layout direction of the light emittingdevice 10. Typically, the lines 33 and 34 perpendicularly intersect withthe layout direction of the light emitting device 10. The extensiondirection of the line 33 and the extension direction of the line 34 aretypically parallel to each other.

Each of the lines 33 and 34 has a 3-dimensional shape that does notallow an air space to be created right below the lines 33 and 34 whenthe insulator 20 is created in the manufacturing process. As shown inFIG. 4, each of the lines 33 and 34 has a thin long band shape. It is tobe noted, however, that each of the lines 33 and 34 does not have tohave the shape shown in FIG. 4. As shown in FIG. 5 for example, the line33 can have a shape in which only a portion in close proximity to theconnection point C1 has a large width whereas the line 34 can have ashape in which only a portion in close proximity to the connection pointC2 has a large width.

The insulator 20 is created to come into contact with the side surfacesof the light emitting device 10 and the upper surface of the lightemitting device 10. The insulator 20 has a band shape extended in thelayout direction of the light emitting device 10. For example, theinsulator 20 has a cubic shape. The height H2 of the insulator 20 isgreater than the height H1 of each light emitting device 10 whereas thewidth W2 of the upper surface of the insulator 20 is greater than thehorizontal width W1 of each light emitting device 10. In addition, thedistance D between the upper surface of the light emitting device 10 andthe upper surface of the insulator 20 satisfies relation (1) given asfollows.

D<[(W2−W1)/2]/tan θm   (1)

In the above equation, the expression (W2−W1)/2 is the distance betweena side surface of the light emitting device 10 and the facing sidesurface of the insulator 20 whereas notation θm denotes a critical angleon the upper surface of the insulator 20.

It is to be noted that, if the distance D is about equal to thedifference H2−H1, notation D used in relation (1) given above may bereplaced with notation (H2−H1).

If the distance D satisfies relation (1) given above, typically, alllight rays included in light originating from the upper surface of thelight emitting device 10 and emitted at angles smaller than an emanationangle of (90 degrees−θm) hit the upper surface of the insulator 20 asshown in the model diagram of FIG. 6. Thus, in this case, the lightfetching efficiency increases.

Manufacturing Method

Next, a typical method for manufacturing the light emitting apparatus 1according to the embodiment is described as follows.

First of all, a wafer 100R on which a number of portions each includedin the light emitting device 10R as a portion other than the secondelectrode 15 have been created is prepared on a crystal growingsubstrate as shown in FIG. 7A. The portions each included in the lightemitting device 10R as a portion other than the second electrode 15 arereferred to hereafter as a light emitting device 110R.

Then, a wafer 100G on which a number of portions each included in thelight emitting device 10G as a portion other than the second electrode15 have been created is prepared on the crystal growing substrate asshown in FIG. 7B. The portions each included in the light emittingdevice 10G as a portion other than the second electrode 15 are referredto hereafter as a light emitting device 110G.

Subsequently, a wafer 100B on which a number of portions each includedin the light emitting device 10B as a portion other than the secondelectrode 15 have been created is prepared on the crystal growingsubstrate as shown in FIG. 7C. The portions each included in the lightemitting device 10B as a portion other than the second electrode 15 arereferred to hereafter as a light emitting device 110B.

It is to be noted that each of the light emitting device 110R, the lightemitting device 110G and the light emitting device 110B forms alaminated structure including the second conductive type layer 13, theactive layer 12, the first conductive type layer 11 and the firstelectrode 14 which are stacked from the side of the crystal growingsubstrate in the order the second conductive type layer 13, the activelayer 12, the first conductive type layer 11 and the first electrode 14are enumerated in this sentence.

Then, a temporarily fixing substrate 200R shown in FIG. 8A is preparedto serve as a substrate used for temporarily fixing all the lightemitting devices 110R on the wafer 100R. By the same token, atemporarily fixing substrate 200G shown in FIG. 8B is prepared to serveas a substrate used for temporarily fixing all the light emittingdevices 110G on the wafer 100G. In the same way, a temporarily fixingsubstrate 200B shown in FIG. 8C is prepared to serve as a substrate usedfor temporarily fixing all the light emitting devices 110B on the wafer100B. Typically, the temporarily fixing substrate 200R, the temporarilyfixing substrate 200G and the temporarily fixing substrate 200B are eacha substrate created by laying an unhardened bonding layer on atransparent substrate such as a quartz substrate or a sapphiresubstrate.

Then, after the wafer 100R and the temporarily fixing substrate 200Rhave been pasted on each other so that the light emitting devices 110Ron the wafer 100R are brought into contact with the bonding layer on thetemporarily fixing substrate 200R, the bonding layer is hardened.Subsequently, the substrate of the wafer 100R is removed typically bycarrying out a lapping process so as to expose the second conductivetype layer 13. Afterwards, the second electrode 15 is created on theexposed second conductive type layer 13. Then, a dry etching process iscarried out for period units of the second electrode 15 in order tospatially separate semiconductor layers composed of the secondconductive type layer 13, the active layer 12 and the first conductivetype layer 11. In this way, a plurality of light emitting devices 10Rare created on the temporarily fixing substrate 200R.

By the same token, after the wafer 100G and the temporarily fixingsubstrate 200G have been pasted on each other so that the light emittingdevices 110G on the wafer 100G are brought into contact with the bondinglayer on the temporarily fixing substrate 200G, the bonding layer ishardened. Subsequently, the substrate of the wafer 100G is removedtypically by carrying out a laser radiation process so as to expose thesecond conductive type layer 13. Afterwards, the second electrode 15 iscreated on the exposed second conductive type layer 13. Then, a dryetching process is carried out for period units of the second electrode15 in order to spatially separate semiconductor layers composed of thesecond conductive type layer 13, the active layer 12 and the firstconductive type layer 11. In this way, a plurality of light emittingdevices 10G are created on the temporarily fixing substrate 200G.

In the same way, after the wafer 100B and the temporarily fixingsubstrate 200B have been pasted on each other so that the light emittingdevices 110B on the wafer 100B are brought into contact with the bondinglayer on the temporarily fixing substrate 200B, the bonding layer ishardened. Subsequently, the substrate of the wafer 100B is removedtypically by carrying out a laser radiation process so as to expose thesecond conductive type layer 13. Afterwards, the second electrode 15 iscreated on the exposed second conductive type layer 13. Then, a dryetching process is carried out for period units of the second electrode15 in order to spatially separate semiconductor layers composed of thesecond conductive type layer 13, the active layer 12 and the firstconductive type layer 11. In this way, a plurality of light emittingdevices 10B are created on the temporarily fixing substrate 200B.

Then, a wiring substrate 300 shown in FIG. 9 is prepared to serve as asubstrate on which the light emitting devices 10R, 10G and 10B are to bemounted. The wiring substrate 300 is a substrate created by laying out aplurality of terminal-electrode pairs each composed of the terminalelectrodes 31 and 32 on a transparent substrate 310 such as a quartzsubstrate. Subsequently, on the terminal electrode 31 of the wiringsubstrate 300, the light emitting devices 10R, 10G and 10B are mounted.

First of all, the light emitting device 10G on the temporarily fixingsubstrate 200G is transferred to the surface of the wiring substrate300. For example, a mounting tool is used for taking out the lightemitting device 10G from the temporarily fixing substrate 200G andmounting the light emitting device 10G on the surface of the wiringsubstrate 300 as shown in FIG. 10A. By the same token, the lightemitting device 10R is taken out from the temporarily fixing substrate200R and then mounted on the wiring substrate 300 whereas the lightemitting device 10B is taken out from the temporarily fixing substrate200B and then mounted on the wiring substrate 300 as shown in FIG. 10B.Later on, the lines 33 and 34 as well as the insulator 20 are created.As a result, a plurality of light emitting apparatus 1 are created onthe wiring substrate 300 as shown in FIG. 10C.

Next, the following description explains details of a series ofprocedures for creating the lines 33 and 34 as well as the insulator 20.

First of all, by adoption of the transfer method explained above, thelight emitting device 10 is mounted on the terminal electrode 31 asshown in FIG. 11A. Then, after a photo-resist layer shown in none of thefigures has been created on the entire surface including the lightemitting device 10, exposure and development processes are carried outin order to create a sacrifice layer 120 which covers the side surfacesof the light emitting device 10 as well as portions of the uppersurfaces of the terminal electrodes 31 and 32 as shown in FIG. 11B.Later on, if necessary, a dry-etching process may be carried out on theentire surface in order to adjust the height of the sacrifice layer 120.

It is to be noted that, by carrying out a reflow process on thesacrifice layer 120, a round shape like one shown in FIG. 11B can becreated on the upper surface of the sacrifice layer 120. As analternative, by carrying out an exposure process making use of a greyscale mask on the sacrifice layer 120, a round shape can also be createdon the upper surface of the sacrifice layer 120.

Then, typically, a sputtering process is carried out in order to createa seed metal 130 on the entire surface including the sacrifice layer 120as shown in FIG. 11C. If Ti and Cu are sequentially sputtered in thesputtering process for example, the seed metal 130 is created to have atwo-layer structure composed of Ti and Cu layers.

Subsequently, a plating metal 140 is stacked in a predetermined area onthe upper surface of the seed metal 130 as shown in FIG. 14D. Forexample, after a mask having apertures in areas in which the lines 33and 34 are to be created later has been created, a plating processmaking use of typically Cu is carried out in order to stack the platingmetal 140 on the seed metal 130.

Then, unnecessary portions of the seed metal 130 and the sacrifice layer120 are removed as shown in FIG. 11E. Thus, a hollow cavity is createdin a member occupied before by the removed sacrifice layer 120. As aresult, remaining portions of the seed metal 130 are separated from eachother, resulting in a gap 150. To be more specific, the gap 150 isformed between a remaining portion pertaining to the seed metal 130 toserve as a portion connected to the terminal electrode 32 and aremaining portion pertaining to the seed metal 130 to serve as a portionconnected to the terminal electrode 31. As a result, a laminatedportion, which is composed of the remaining portion pertaining to theseed metal 130 to serve as a portion connected to the terminal electrode32 and the plating metal 140, forms the line 34. On the other hand, alaminated portion, which is composed of the remaining portion pertainingto the seed metal 130 to serve as a portion connected to the terminalelectrode 31 and the plating metal 140, forms the line 33.

Then, typically, a spin coat method is adopted in order to create atransparent resin layer 160 so that the light emitting device 10, theline 34 and the line 33 are embedded in the transparent resin layer 160as shown in FIG. 11F. In this process of creating the transparent resinlayer 160 by adoption of the spin coat method, the transparent resinlayer 160 may be created by dividing the transparent resin layer 160into a plurality of transparent resin layers created sequentially atdifferent times. For example, the transparent resin layer 160 is dividedinto typically three transparent resin layers 161, 162 and 163 as shownin FIG. 11F. In this case, first of all, the transparent resin layer 161is created as a layer in which the light emitting device 10, the line 34and the line 33 are embedded. Then, the transparent resin layer 162 iscreated to serve as a layer for filling up a dented portion 160A of thetransparent resin layer 161. Subsequently, the transparent resin layer163 is created to serve as a layer for making the upper surface flat. Inthis way, the transparent resin layer 160 composed of the threetransparent resin layers 161, 162 and 163 can be created. Later on, thetransparent resin layer 160 is hardened. Thus, the insulator 20 iscreated.

Then, the sacrifice layer 120 is divided into portions each allocated toone light emitting device 10 or a plurality of light emitting devices 10as shown in FIG. 11G. For example, a photolithography technique or amilling technique is adopted in order to create a grove 20A penetratingthe insulator 20 through a part between the line 33 and the line 34 andavoiding the gap 150 in the insulator 20. In this way, the sacrificelayer 120 is divided into portions and a light emitting apparatus 1including a resulting portion of the sacrifice layer 120 is created.

Mounting Method

Next, the following description explains a typical method for mountinglight emitting apparatus 1, which have been created on a wiringsubstrate 300, on a wiring substrate 400 included in a display panel oran illumination panel.

First of all, a temporarily fixing substrate shown in none of thefigures is prepared to serve as a substrate for temporarily fixing alllight emitting apparatus 1 created on the wiring substrate 300. Thetemporarily fixing substrate used for temporarily fixing light emittingapparatus 1 is typically a substrate created by laying an unhardenedbonding layer on a transparent substrate such as a quartz substrate.

Then, a wiring substrate 400 is prepared to serve as a substrate onwhich light emitting apparatus 1 are to be mounted. The wiring substrate400 is a support substrate 410 having, among others, a plurality ofelectrode pads 420 provided on the support substrate 410 as shown inFIG. 12A. In addition, the wiring substrate 400 also has typicallysoldering paste on the electrode pads 420. The soldering paste itself isnot shown in FIG. 12A.

Then, after the wiring substrate 300 and the temporarily fixingsubstrate have been pasted on each other so that the light emittingapparatus 1 on the wiring substrate 300 are brought into contact withthe bonding layer on the temporarily fixing substrate, the bonding layeris hardened. Subsequently, the transparent substrate 310 is removed andthe light emitting apparatus 1 are separated from each other. Then, thelight emitting apparatus 1 separated from each other are mounted on thewiring substrate 400. For example, after the wiring substrate 400 andthe temporarily fixing substrate have been pasted on each other so thatthe light emitting apparatus 1 separated from each other on thetemporarily fixing substrate are brought into contact with the wiringsubstrate 400, the light emitting apparatus 1 are peeled off from thetemporarily fixing substrate. As a result, the light emitting apparatus1 are mounted on typically the electrode pads 420 of the wiringsubstrate 400 through the soldering paste as shown in FIGS. 12A and 12B.Then, typically, a reflow process is carried out on the wiring substrate400 in order to fix the light emitting apparatus 1 on the wiringsubstrate 400. In this way, the light emitting apparatus 1 can bemounted on the wiring substrate 400.

Effects

Next, effects of the light emitting apparatus 1 according to the firstembodiment are explained as follows.

In accordance with the first embodiment, the line 34 for electricallyconnecting the second electrode 15 provided on the upper surface of thelight emitting device 10 and the terminal electrode 32 of the lightemitting apparatus 1 to each other is a line created in a film creationprocess such as a plating process in place of a wire bonding process.Thus, the line 34 can be embedded in the insulator 20 in which the lightemitting device 10 is embedded. As a result, the thickness of the lightemitting apparatus 1 can be reduced without decreasing the yield of whatis obtained from a wafer and the transfer-time yield.

In addition, in accordance with the first embodiment, the line 33electrically connected to the terminal electrode 31 and extended towardthe upper surface of the light emitting device 10 is also a line createdin a film creation process such as a plating process in place of a wirebonding process. Thus, the line 33 can also be embedded in the insulator20 in which the light emitting device 10 is embedded. As a result, thethickness of the light emitting apparatus 1 can be reduced withoutdecreasing the yield of what is obtained from a wafer and thetransfer-time yield. In addition, in comparison with a configurationincluding no line 33, the upper surface of the insulator 20 can be madeflat over a broader range.

On top of that, in accordance with the first embodiment, each of thelines 33 and 34 is a line created in a film creation process such as aplating process as described above. Thus, by selecting a proper filmcreation method, it is possible to do things such as creation of thelines 33 and 34 in a conformal way in spite of the very fine structuresof the lines 33 and 34 and creation of the lines 33 and 34 eachincluding a dented portion slightly thicker than required. As a result,the structure of each of the lines 33 and 34 can be made stableelectrically and mechanically.

In addition, in accordance with the first embodiment, each of the lines33 and 34 has a 3-dimensional shape that does not allow an air space tobe created right below the lines 33 and 34 when the insulator 20 iscreated in the manufacturing process. Thus, it is possible to preventthe light fetching efficiency from decreasing due to, among othercauses, the fact that light emanating from the light emitting device 10is scattered in such an air space.

On top of that, in accordance with the first embodiment, the heights ofthe light emitting device 10 and the insulator 20 as well as the widthsof the light emitting device 10 and the insulator 20 satisfy therelation described earlier. Thus, a high light fetching efficiency canbe implemented.

2: Typical Modified Versions of the First Embodiment First ModifiedVersion

In the case of the embodiment described above, each of the lines 33 and34 is extended toward the upper surface of the light emitting device 10.In addition, as shown in FIG. 13 for example, the line 33 may beprovided with protrusions 33A at a location separated away from thelight emitting device 10 in a direction departing from the lightemitting device 10 whereas the line 34 may be provided with protrusions34A at a location separated away from the light emitting device 10 in adirection departing from the light emitting device 10. On top of that,as shown in FIG. 14 for example, the protrusions 33A and 34A may becreated to enclose the surroundings of the light emitting device 10. Itis to be noted that, if the protrusions 33A and 34A are created toenclose the surroundings of the light emitting device 10, it is possibleto provide a portion included in the line 33 as a portion extended tothe side of the light emitting device 10 or eliminate such a portion asshown in FIG. 14. In such a configuration, light emanating from a sidesurface of the light emitting device 10 is reflected by the protrusions33A and 33B to the upper surface of the light emitting apparatus 1 andemitted to the outside from the upper surface of the light emittingapparatus 1. Thus, an even higher light fetching efficiency can beimplemented.

Second Modified Version

In addition, in the case of the first embodiment and the first modifiedversion, the upper surface of the insulator 20 is all but flat. However,as shown in FIG. 15 for example, the upper surface of the insulator 20can be a rough surface 20A. If the upper surface of the insulator 20 isa rough surface 20A, light radiated from the light emitting device 10 inan inclined direction is easily refracted and transmitted. Thus, an evenhigher light fetching efficiency can be implemented.

Third Modified Version

In addition, in the case of the first embodiment as well as the firstand second modified versions, the light emitting apparatus 1 has threelight emitting devices 10. However, the light emitting apparatus 1 mayalso be provided with one, two or at least four light emitting devices10. As shown in FIG. 16A for example, the light emitting apparatus 1 isprovided with two light emitting devices 10. As shown in FIG. 16B, onthe other hand, the light emitting apparatus 1 is provided with only onelight emitting device 10.

Fourth Modified Version

In addition, in the case of the first embodiment and the first to thirdmodified versions, the second electrode 15 is created on the uppersurface of the light emitting device 10. However, as shown in FIGS. 17Aand 17B for example, the second electrode 15 may be created on the lowersurface of the light emitting device 10. In the case of this fourthmodified version, the light emitting device 10 has a flip-chipstructure. In addition, the line 34 is no longer brought into directcontact with the second electrode 15. Instead, the terminal electrode 32is brought into direct contact with the second electrode 15.

3: Second Embodiment Configuration

Next, a display apparatus 2 according to a second embodiment of thepresent disclosure is explained as follows. In the display apparatus 2,the light emitting apparatus 1 according to the first embodimentdescribed so far or according to a modified version of the firstembodiment is used as a display pixel. FIG. 18 is a perspective-viewdiagram showing a typical rough configuration of the display apparatus 2according to the second embodiment of the present disclosure. Thedisplay apparatus 2 is referred to as the so-called LED displayapparatus in which an LED is used in each display pixel. As shown inFIG. 18 for example, the display apparatus 2 employs a display panel 210and a driving circuit which is used for driving the display panel 210but not shown in FIG. 18.

Display Panel 210

The display panel 210 has a mounting substrate 210-1 and a transparentsubstrate 210-2 which are superposed on each other. The surface of thetransparent substrate 210-2 is used as a video display screen having adisplay area 210A at the center portion thereof. The portion surroundingthe display area 210A is a frame area 210B which is a non-display area.

FIG. 19 is a top-view diagram showing a typical layout of an area on asurface of the mounting substrate 210-1. This surface of the mountingsubstrate 210-1 is a surface exposed to the transparent substrate 210-2.This area is an area corresponding to the display area 210A. FIG. 20A isan enlarged perspective-view diagram showing a typical configuration ofa display pixel 213 on the layout shown in FIG. 19 whereas FIG. 20B is adiagram showing the configuration of a cross section indicated by anarrow A-A in FIG. 20A as a cross section of the display pixel 213.

Mounting Substrate 210-1

An area in the surface of the mounting substrate 210-1 corresponds tothe display area 210A. In this area, typically, a plurality of paralleldata lines 211 are created, being stretched in a direction determined inadvance as shown in FIG. 19. In addition, the parallel data lines 211are separated from each other at a pitch also determined in advance. Ontop of that, in this area existing in the surface of the mountingsubstrate 210-1 and corresponding to the display area 210A, a pluralityof parallel scan lines 212 are also typically created, being stretchedin a direction intersecting with the data lines 211. For example, thescan lines 212 are stretched in a direction perpendicular to the datalines 211. In addition, the parallel scan lines 212 are separated fromeach other at a pitch determined in advance. Each of the data lines 211and the scan lines 212 is made from a conductive material such as Cu(copper).

The scan line 212 is created typically on an outermost layer. Forexample, the scan line 212 is created on an insulation layer created onthe surface of a base material of the mounting substrate 210-1. Theinsulation layer itself is shown in none of the figures. The basematerial of the mounting substrate 210-1 is typically a glass substrate,a resin substrate or another substrate. The insulation layer created onthe surface of the base material is made from typically SiN, SiO₂ orAl₂O₃.

On the other hand, the data line 211 is created in a layer differentfrom the outermost layer on which the scan line 212 is created. Forexample, the data line 211 is created in a layer below the outermostlayer. To be more specific, the data line 211 is created in typically aninsulation layer above the base material.

On the surface of the insulation layer, typically, blacks are providedif necessary in addition to the scan line 212. A black is used forimproving contrast and made from a material having a light absorptionproperty. Typically, the black is created in at least an area in whichno electrode pad 420 is created. The area in which no electrode pad 420is created is an area on the surface of the insulation layer. It is tobe noted that, if necessary, the blacks can be omitted.

The vicinity of an intersection of a data line 211 and scan line 212 isallocated to a display pixel 213. A plurality of display pixels 213 arelaid out in the display area 210A to form a matrix. As shown in FIG. 19for example, the display pixel 213 is a light emitting apparatus 1including a plurality of light emitting devices 10. It is to be notedthat FIG. 19 shows a typical configuration in which the light emittingapparatus 1 serving as a display pixel 213 has three light emittingdevices 10 which are light emitting devices 10R, 10G and 10B. In thisconfiguration, the light emitting device 10R emits light having a redcolor, the light emitting device 10G emits light having a green colorwhereas the light emitting device 10B emits light having a blue color.In this case, the light emitting device 10 is typically an LED chip.

As shown in FIGS. 20A and 20B for example, the light emitting apparatus1 is provided with a terminal-electrode pair composed of terminalelectrodes 31 and 32 for each of the light emitting devices 10 includedin the light emitting apparatus 1. The terminal electrode 31 iselectrically connected to the data line 211 whereas the terminalelectrode 32 is electrically connected to the scan line 212. To put itin detail, the terminal electrode 31 is electrically connected typicallyto a pad electrode 420 at the end of a branch 211A provided on the dataline 211. On the other hand, the terminal electrode 32 is electricallyconnected typically to a pad electrode 420 at the end of a branch 212Aprovided on the scan line 212.

Each of the pad electrodes 420 is typically created on an outermostlayer. As shown in FIGS. 19, 20A and 20B for example, each of the padelectrodes 420 is provided on a member on which the light emittingapparatus 1 is to be mounted. In this case, each of the pad electrodes420 is made from typically a conductive material such as Au (gold).

In addition, the mounting substrate 210-1 is also provided with aplurality of support pillars shown in none of the figures. The supportpillars set the gap between the mounting substrate 210-1 and thetransparent substrate 210-2. The support pillars can be provided in anarea facing the display area 210A or an area facing the frame area 210B.

Transparent Substrate 210-2

The transparent substrate 210-2 is typically a glass substrate, a resinsubstrate or the like. In the transparent substrate 210-2, the surfaceon the side of the light emitting apparatus 1 can be flat. It isdesirable, however, to provide a rough surface. The rough surface can beprovided over the entire area exposed to the display area 210A orprovided only in an area facing the display pixel 213. The rough surfaceis provided with fine unevenness of such a degree that, when lightemanating from the light emitting device 10 hits the rough surface, therough surface scatters the light incident thereto. The unevenness of therough surface can be created by carrying out typically a sand glassprocess or a dry etching process.

Driving Circuit

The driving circuit is a circuit for driving a plurality of displaypixels 213 on the basis of a video signal. The driving circuit iscomposed to include typically a data driver for driving data lines 211each connected to a display pixel 213 and a scan driver for driving scanlines 212 also each connected to a display pixel 213. The drivingcircuit is typically mounted on the mounting substrate 210-1 or providedseparately from the display panel 210. In addition, the driving circuitcan be connected to the mounting substrate 210-1 by lines shown in noneof the figures.

Method for Manufacturing the Display Panel 210

Next, a typical method for manufacturing the display panel 210 isexplained as follows.

First of all, a circuit substrate is typically prepared on a basematerial. The circuit substrate has an insulation layer, a line patternand blacks shown in none of the figures. The insulation layer includes aplurality of data lines 211 embedded therein. The line pattern iscomposed of scan lines 212 and electrode pads 420.

Then, a plurality of light emitting apparatus 1 are mounted on thecircuit substrate. The light emitting apparatus 1 are mounted on thecircuit substrate by adoption of the same method as that alreadyexplained earlier in the description of the first embodiment. In thisway, the mounting substrate 210-1 is created.

Subsequently, the mounting substrate 210-1 and the transparent substrate210-2 are exposed to each other and, then, pasted on each other. In thisway, the display panel 210 is manufactured.

Operations/Effects of the Display Apparatus 2

In this second embodiment, light emitting apparatus 1 are driven by thedriving circuit through data lines 211 and scan lines 212 in anoperation referred to as a simple matrix driving operation because thedata lines 211 and the scan lines 212 are laid out to form a simplematrix. The driving circuit drives the light emitting apparatus 1 inorder to sequentially supply currents to the light emitting apparatus 1each provided in the vicinity of the intersection of one of the datalines 211 and one of the scan lines 212. In this way, an image isdisplayed on the display area 210A.

By the way, in this second embodiment, each light emitting apparatus 1is mounted on a display pixel 213 provided on the display panel 210.Thus, the thickness of the light emitting apparatus 1 can be reduced. Asa result, the thickness of the display panel 210 can also be reduced aswell. In addition, since the light fetching efficiency of the lightemitting apparatus 1 is high, a bright image can be obtained at a lowpower consumption.

On top of that, if the surface of the transparent substrate 210-2 in thesecond embodiment is a rough surface, some of light emanating from thelight emitting apparatus 1 in an inclined direction is scattered by therough surface. Thus, some of the scattered light passes through thetransparent substrate 210-2 and is radiated to the outside. As a result,the light emanating from the light emitting apparatus 1 in an inclineddirection is reflected by the rear surface of the transparent substrate210-2 or confined in the transparent substrate 210-2 so that it ispossible to reduce the amount of generated stray light. Accordingly, itis possible to prevent the light fetching efficiency from decreasing dueto the transparent substrate 210-2.

In addition, if blacks are provided on the rear surface of the mountingsubstrate 210-1 in this second embodiment, it is not necessary toprovide blacks on the transparent substrate 210-2. Thus, alignment isnot required when pasting the mounting substrate 210-1 and thetransparent substrate 210-2 on each other in a manufacturing process. Asa result, the productivity is improved.

4: Modified Versions of the Second Embodiment

In the case of the second embodiment, every light emitting apparatus 1includes three light emitting devices 10. However, every light emittingapparatus 1 may also include fewer than three light emitting devices 10,or four or more light emitting devices 10. As shown in FIG. 21 forexample, every light emitting apparatus 1 may include only one lightemitting device 10.

In addition, in the case of the second embodiment, a light emittingdevice 10 included in a light emitting apparatus 1 is connected to adata line 211 different from data lines 211 connected to other lightemitting devices 10 included in the same light emitting apparatus 1.However, as shown in FIG. 22 for example, light emitting devices 10included in the same light emitting apparatus 1 may also be connected tothe same data line 211. In such a configuration, all light emittingdevices 10 included in the same light emitting apparatus 1 areimplemented by LEDs of the same type so that the display pixel 213 ofthe light emitting apparatus 1 emits light of the same color.

On top of that, in the case of the second embodiment, the three lightemitting devices 10 included in the same light emitting apparatus 1 emitlight rays having wavelength bands different from each other. However,the three light emitting devices 10 included in the same light emittingapparatus 1 may also emit light rays having the same wavelength band. Inthis case, nevertheless, it is desirable to provide fluorescentsubstances 215 on the rear surface of the transparent substrate 210-2 asshown for example in FIG. 23. The provided fluorescent substances 215are typically three fluorescent substances 215G, 215R and 215B providedfor one light emitting apparatus 1 as shown in FIG. 23. The fluorescentsubstance 215G is a fluorescent substance for light having a greencolor, the fluorescent substance 215R is a fluorescent substance forlight having a red color whereas the fluorescent substance 215B is afluorescent substance for light having a blue color. In this case, ifthe light emitting device 10 is a LED chip emitting light having a bluecolor for example, the light emitted by the light emitting device 10hits the fluorescent substances 215G, 215R and 215B and excites thefluorescent substances 215G, 215R and 215B so that the fluorescentsubstances 215G, 215R and 215B emit color light rays having luminancevalues each according to the amount of the incident color light ray.

5: Third Embodiment Configuration

Next, an illumination apparatus 3 according to a third embodiment of thepresent disclosure is explained as follows. The illumination apparatus 3employs light emitting apparatus 1 each serving as a light source. Thelight emitting apparatus 1 employed in the illumination apparatus 3 isthe light emitting apparatus according to the first embodiment describedearlier or the modified versions of the first embodiment. FIG. 24 is aperspective-view diagram showing a typical rough configuration of theillumination apparatus 3 according to the third embodiment of thepresent disclosure. The illumination apparatus 3 is one of the so-calledLED illumination apparatus in which LEDs are each employed to serve as alight source. As shown in FIG. 24 for example, the illuminationapparatus 3 is provided with typically an illumination panel 330 and adriving circuit for driving the illumination panel 330. The drivingcircuit itself is not shown in FIG. 24 though.

Illumination Panel 330

The illumination panel 330 has a mounting substrate 330-1 and atransparent substrate 330-2 which are superposed on each other. Thesurface of the transparent substrate 330-2 is used as a surface foroutputting illumination light. The transparent substrate 330-2 has adisplay area 330A at the center portion thereof.

FIG. 25 is a top-view diagram showing a typical layout of an area on asurface of the mounting substrate 330-1. This surface of the mountingsubstrate 330-1 is a surface exposed to the transparent substrate 330-2.This area is an area corresponding to the display area 330A. Anillumination pixel 214 in this third embodiment corresponds to thedisplay pixel 213 on the mounting substrate 210-1 in the secondembodiment shown in FIG. 19.

(Driving Circuit)

The driving circuit is a circuit for driving a plurality of illuminationpixels 214. The driving circuit is composed to include typically a datadriver for driving data lines 211 each connected to an illuminationpixel 214 and a scan driver for driving scan lines 212 also eachconnected to an illumination pixel 214. The driving circuit is typicallymounted on the mounting substrate 330-1 or provided separately from theillumination panel 330.

Method for Manufacturing the Illumination Panel 330

Next, a typical method for manufacturing the illumination panel 330 isexplained as follows.

First of all, a circuit substrate is typically prepared on a basematerial. The circuit substrate has an insulation layer, a line patternand blocks shown in none of the figures. The insulation layer includes aplurality of data lines 211 embedded therein. The line pattern iscomposed of scan lines 212 and pad electrodes 215.

Then, a plurality of light emitting apparatus 1 are mounted on thecircuit substrate. The light emitting apparatus 1 are mounted on thecircuit substrate by adoption of the same method as that alreadyexplained earlier in the description of the first embodiment. In thisway, the mounting substrate 330-1 is created.

Subsequently, the mounting substrate 330-1 and the transparent substrate330-2 are exposed to each other and, then, pasted on each other. In thisway, the illumination panel 330 is manufactured.

Operations/Effects of the Illumination Apparatus 3

In this third embodiment, light emitting apparatus 1 are driven by thedriving circuit through data lines 211 and scan lines 212. The datalines 211 and the scan lines 212 are laid out to form a simple matrix.The driving circuit drives the light emitting apparatus 1 in order tosequentially supply currents to the light emitting apparatus 1 eachprovided in the vicinity of the intersection of one of the data lines211 and one of the scan lines 212. In this way, illumination light isoutput from the display area 330A.

By the way, in this third embodiment, each light emitting apparatus 1 ismounted on an illumination pixel 214 on the illumination panel 330.Thus, the thickness of the light emitting apparatus 1 can be reduced. Asa result, the thickness of the illumination panel 330 can also bereduced as well. In addition, since the light fetching efficiency of thelight emitting apparatus 1 is high, bright illumination light can beobtained at a low power consumption.

The present disclosure has been exemplified above by explainingembodiments and modified versions of the embodiments. However,implementations of the present disclosure are by no means limited to theembodiments and the modified versions. That is to say, a variety ofchanges can be further made to the embodiments and the modified versionsin order to implement the present disclosure.

For example, in the embodiments described above for example, every lightemitting apparatus 1 includes a plurality of light emitting devices 10.However, every light emitting apparatus 1 may also include only onelight emitting device 10. In addition, in accordance with theembodiments for example, on the mounting substrate 210-1 or 310-1, aplurality of light emitting apparatus 1 are laid out to form a matrix.However, the light emitting apparatus 1 may also be laid out to form aline. On top of that, lines for driving the light emitting apparatus 1laid out on the mounting substrate 210-1 or 310-1 are the data lines 211and scan lines 212 forming a simple matrix in conjunction with the datalines 211. However, the data lines 211 and scan lines 212 may also formanother line pattern.

In addition, in accordance with the embodiments for example, aninsulator 20 is provided. However, the insulator 20 can also beeliminated. In this case, each of the lines 33 and 34 becomes a midairline as the term indicates.

The present disclosure contains subject matter related to that disclosedin Japanese Priority Patent Application JP 2011-038639 filed in theJapan Patent Office on Feb. 24, 2011, the entire content of which ishereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors in so far as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A light emitting apparatus comprising: a lightemitting device having upper and lower sides and emitting light from anupper surface at the upper side thereof; a first electrode at the lowerside and a second electrode at the upper side; first and second terminalelectrodes provided at the lower side with the light emitting deviceoverlying the first terminal electrode and with its first electrodeelectrically connected to the first terminal electrode, the secondterminal electrode laterally spaced from the first terminal electrodeand not overlain by the light emitting device; a first metal lineelectrically connecting the second terminal electrode and the secondelectrode; a second metal line electrically connected to the firstterminal electrode but not connected to the light emitting device; and atransparent insulator in which the light emitting device, the firstmetal line, the second metal line are embedded.
 2. The light emittingapparatus according to claim 1, in cross section, the second electrodeis surrounded on three sides by the first metal line.
 3. The lightemitting apparatus according to claim 1, wherein a connection pointconnecting the first metal line to the second terminal electrode and aconnection point connecting the second metal line to the first terminalelectrode are at opposite sides of the light emitting device.
 4. Thelight emitting apparatus according to claim 1, wherein each of the firstand second metal lines has a cubic shape not allowing an air space to becreated right below each of the first and second metal lines in aprocess of creating the transparent insulator.
 5. The light emittingapparatus according to claim 1, wherein each of the first and secondmetal lines has a protrusion oriented in a direction departing from thelight emitting device.
 6. The light emitting apparatus according toclaim 1, wherein, a distance D between the upper surface of the lightemitting device and the upper surface of the insulator satisfies therelation:D<[(W2−W1)/2]/tan θm, where, W1 denotes a width of the light emittingdevice; W2 denotes the width of the upper surface of the insulator; andθm denotes a critical angle on the upper surface of the insulator. 7.The light emitting apparatus of claim 1 comprising a plurality of thelight emitting devices, each with respective (a) first and secondelectrodes, (b) first and second terminal electrodes, (c) first andsecond metal lines, and (d) insulators.
 8. The light emitting apparatusof claim 1, comprising a junction layer between the first electrode andthe first terminal electrode.
 9. An illumination apparatus including alight emitting apparatus as set forth in claim 1 mounted on a substrate.10. A display apparatus including: a display panel having a plurality ofpixels, and a driving circuit for driving the pixels based on a videosignal, wherein, each pixel comprises a light emitting apparatus as setforth in claim
 1. 11. A method for making a light emitting device having(a) upper and lower sides, (b) a first electrode at the lower side and asecond electrode at the upper side, (c) first and second terminalelectrodes at the lower side with the light emitting device overlyingthe first terminal electrode and with its first electrode electricallyconnected to the first terminal electrode, (d) the second terminalelectrode laterally spaced from the first terminal electrode and notoverlain by the light emitting device, (e) a first metal lineelectrically connecting the second terminal electrode and the secondelectrode, and (f) a second metal line electrically connected to thefirst terminal electrode but not connected to the light emitting device,the method comprising: creating a sacrifice layer covering side surfacesof the light emitting device and covering respective portions of thefirst and second terminal electrodes; creating a seed metal on theentire surface including the sacrifice layer; stacking a plating metalin a predetermined area of the upper surface of the seed metal after theseed metal has been created; and removing at least members included inthe seed metal as members not brought into contact with the platingmetal and removing the sacrifice layer.
 12. The method of claim 11,comprising embedding the light emitting device in an insulator, whereinthe insulator is created by creating and hardening a transparent resinlayer so that the light emitting device, the first metal line, and thesecond metal line are embedded in the transparent resin layer after thefirst and second metal lines have been created.